Semiconductor with bonded electrical contact

ABSTRACT

A method is disclosed for batch forming extended beam leads to the pads or contact areas of a solid state device (e.g., monolithic integrated circuit hybrid integrated circuit, discrete device) whereby external connections to the device may be made. The process involves depositing a metal or a plurality of metals over the device in a predetermined manner with the metal adhering to the device contact area but only weakly, if at all, adhering to the remainder of the surface. The device is separated by backside scribing which leaves the beams extending from the contact area of each device.

United States Patent Schroeder Feb. 1, 1972 [54] SEMICONDUCTOR WITH BONDED ELECTRICAL CONTACT [21] Appl. No.: 71,363

Related U.S. Application Data [62] Division of Ser. No. 682,193, Nov. 13, 1967.

3,335,338 8/1967 Lepselter ..3 1 7/234 3,341,753 9/1967 Cunningham et al... .....317/234 3,442,701 5/1969 Lepselter ..1 17/212 Primary Examiner-James D. Kallam Att0rneyRoger S. Borovoy and Alan H. MacPherson [5 7] ABSTRACT A method is disclosed for batch forming extended beam leads to the pads or contact areas of. a solid state device (e.g., monolithic integrated circuit hybrid integrated circuit, discrete device) whereby external connections to the device may be made. The process involves depositing a metal or a plurality of metals over the device in a predetermined manner with the metal adhering to the device contact area but only weakly, if at all, adhering to the remainder of the surface. The device is separated by backside scribing which leaves the beams extending from the contact area of each device.

A Claims 6 Drawing Figures INVENTOR.

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' SEMICONDUCTOR WITH BONDED ELECTRICAL CONTACT This is a divisional application of Ser. No. 682,193, filed Nov. 13,1967.

BACKGROUND OF THE INVENTION l. Field of the Invention This invention relates to a method of forming an electrical connection to a semiconductor chip.

2. Description of the Prior Art Integrated circuits require external electrical connections for the purpose of supplying power, for the purpose of interconnecting a number of circuits together, and for various other purposes. To provide for such connections a number of areas of conductive material (e.g., aluminum film), referred to as pads, are associated with each circuit. These pads are usually placed around the perimeter of the circuit to allow maximum density and flexibility of interconnection of the components of the circuit. Each pad provides sufficient area so that a conventional lead wire may be connected .to it by a common bonding technique such as ultrasonic bonding or thermocompression bonding.

In the prior art as stated, the pads have been located outside the area occupied by the circuit components. Such location of the pads substantially increases the total area of the integrated circuit limiting the maximum component density obtainable. The number of circuits that may be batch processed in a single operation by such fabrication equipment as diffusion furnaces and photographic masking jigs is, in part, determined by the area of each integrated circuit. Thus, the increase in area of an integrated circuit attributable to the pad area decidedly limits integrated circuits production output.

Another disadvantage of such prior art methods is that the pad area does not contain any underlying circuit components. This is because pressure is required to bond the wires to the pad itself which pressure might damage underlying components. Thus, the area on which the pads are located is employed strictly as a support in prior art methods. In some arrangements the pad area may occupy as much as 40 percent of the integrated circuit.

One prior art method eliminates a large amount of the pad area waste by providing conductive pads that may be folded over onto the substrate. This method has the disadvantage that the bonding of electrical connections must be carefully controlled as too much pressure damages underlying substrates or components. Such a method also requires an extra layer of insulating material.

SUMMARY OF THE INVENTION The subject invention reduces the area required for an integrated circuit and provides a batch method for bonding a lead to an integrated circuit. This enables an electrical connection to be made to an integrated circuit without further wiring or other electrical connection.

Briefly, the invention comprises a method of forming an electrical connection to a device comprising the steps of providing at least one conductive contact area on the surface of a device; masking said device such that predetermined open strip configurations are coincident with said metallic contact pad and extend longitudinally therefrom on the device surface and onto the layer of conductive selectively adhering material, said material adhering to said contact area but not adhering to said device surface.

One of the advantages of the invented method is that devices may be placed directly under the contact pad or area. Heretofore, the dangers of excess strain on the device during bonding, prohibited this, however, in the present invention external connection is made to extended conductive fingers or beams and no pressure is placed on the contact pads themselves. Hence, more useable area is to be had for the same chip size. The contact pads may be made smaller as they are no longer required to have a size sufficient to receive a wire.

Another advantage of the present invention is that all external leads may be bonded at once. It is no longer necessary to bond contact wires to individual pads. Furthermore, the extendedbeams may be formed from simple metal system by vacuum evaporation requiring no etching or other processing step.

The novel features which are believed to be characteristic of the invention, both as to its organization and method of operation, together with future objects and advantages thereof will be better understood from the following description considered in connection with the accompanying drawing in which a presently preferred embodiment of the invention is illustrated by way of example. It is to be expressly understood, however, that the drawing is for the purpose of illustration and description only, and is not intended as a definition of the limits of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1D illustrate in diagrammatic form the method of providing extended beam leads on a substrate or device surface;

FIG. 2 is a top view in diagrammatic form of two neighboring device chips having multiple extended beam leads; and,

FIG. 3 is a perspective of a beam lead on a device chip.

DESCRIPTION OF THE PREFERRED EMBODIMENT The extended beam lead technique of providing electrical connections to semiconductor devices is equally applicable to single discrete devices as well as integrated circuits such as shown in U.S. Pat. application Ser. No. 582,814, filed Sept. 29, 1966 by B. Frescura, et al., and assigned to assignee of this application. In the preferred embodiment of the invention the extended beam lead and the process relating thereto is described in connection with an integrated circuit.

Referring now to FIG. 1A, there is provided a substrate or device I0 which may be a monolithic silicon chip having a scribe line 14 thereon for separating the chips into two or more devices. A passivating or protective layer 13 such as SiO may cover the surface of the device 10. To connect a number of circuits together and to connect one device to another device, a conductive contact or pad 12 is associated with one of the circuits or components I5 which is formed in accordance with well-known techniques as described in U.S. Pat. No..2,98 l ,877 to Robert N. Noyce and assigned to the assigneeof this invention. The pad 12 is placed directly over and in electrical contact with component 15 via an aperture in layer 1-3. The pad 12 may conveniently be 2 mils wide by 2 mils long and made of aluminum. (Prior art conductors usually, employ pad 5X5 mils in order to receive a wire.) Any suitable. conductive material, however, may be used as pad 12. The forming of a device and pad as shown in FIG. 1A is by conventional techniques. Normally a discrete device or integrated circuit has a plurality of regions on which conductive pads are positioned and to which extended beam leads in accordance with this invention may be simultaneously formed. For simplicity, the description proceeds primarily with reference to the formation of a beam lead to the single illustrated conductive pad 12.

Next, a layer of material which is selectively adhering is deposited in a pattern on device 10. To accomplish this a mask is placed over the device and is oriented and held down firmly in close contact to the surface of the device. The mask has a cutout extending over and coinciding with contact pad 12 which in configuration resembles a finger, and which has a width at one end about the same as the pad itself. The finger cutout extends over the scribe line 14 and over to an adjoining device 10A (FIG. 2). Thus, the cutout in the mask coincides with aluminum pad 12 and extends therefrom over the protective layer 13.

With'the mask in place, the depositing of the selectively adhering'material is performed (FIG. 18). Typically this may be done by a flash evaporation of silver in well known vacuum depositing equipment. The silver may be deposited to a thickness of no less than approximately 500 A to form layer 16 (FIG. 1B). The layer 16 has the property of nonadherence to SiO, and of adhering strongly to the pad 12. In addition it is preferred that layer 16 act as a conductor.

With the mask still in place, a second layer 18 is evaporated to a thickness which may be about 25 microns (FIG. 1C). The second layer 18 is deposited over layer 16. The second layer 16 has the property of adhering well to the first layer and of acting as a conductor when in contact with the first layer. The layer 18 which adheres to layer 16, is a conductive material that is deposited to a predetermined thickness e.g., no less than 250 microns) to provide additional mechanical strength to the extended beam 20 (FIG. 3).

In one preferred embodiment of the present process invention, the first layer 16 is silver and the second layer 18 is aluminum. Of course, a combination of any two suitable materials may be used or a single material may be used. For example, silver alone may be used for certain applications. The only requirement is that the material adjacent device adhere well to the pad 12 but not adhere to protective layer 13. In certain applications a protective layer may not be used. Thus, the first and second layers are selected (1) for their adhesion to each other, and (2) for the nonadhesion of the first metal to the device surface, (3) for the electrical characteristics, such as resistance, and (4) for their strength characteristics. It should be noted that when aluminum is deposited over silver the bonded aluminum-silver beam has a low electrical resistance, good strength, adhesion to the contact pad and nonadhesion to the device surface. Other materials that may be employed as a substitute for aluminum are chromium, platinum, titanium, molybdenum and gold; other materials that may be used rather than silver (nonadhering to device surface) are gold, antimony and others. It should be understood that the various forms of vacuum deposition, plating and other techniques for fonning thin layers of conductive material may be employed.

If several or more devices are treated at the same time, as shown in FIG. 2, when the mask is removed the resultant pattern is represented by a plurality of discrete interdigitated fingers comprising sets and 20A. The fingers of each set extend over the scribe line 14 onto the adjacent devices. The shape of the fingers accommodate the interdigitation.

' It is within the scope of the invention to form the layers 16 and 18 by photoengraving process such as mentioned in previously referred to U.S. Pat. No. 2,981,877. In addition, it is not necessary that 16 be coincident with layer 18 over the entirety of layer 18. This will be further explained later in the descriptron.

Next, the wafer is backside scribed with the devices separated by mechanical pressure (FIG. 1D). These devices are brittle and break at the scribe line 14. This scribing and breaking results in the forming of extended beams 20 which easily separate from the surface of the adjacent device since there is'poor adhesion between the first layer 16 and the device oxide surface 13 over which they extend. Thus, the first layer deposited serves as a release agent for the extended beam. It should be noted, however, that the first layer (e.g., silver) has excellent adhesion to contact pad 12 and the layer 18, thereby forming an integral extended beam which has good electrical and mechanical properties. At this point it can be seen that it is only necessary layer 16 be deposited over surfaces that are to be separated from the lead. For example, insofar as device 10 is concerned layer 16 need only be deposited on device 10'. This enables a minimum of silver to be employed and enables a better mechanical support. This also facilitates the forming of contact 12 and layer 18 simultaneously.

The resulting structure (FIGS. 1D and 3) has extended beams which are connected to the contact pads which are arranged across the width and length of a chip. These extended beams then extend beyond the edge of the chip and away from the urea of scribe line 14 which marks the boundary of u device. The masking scheme can be designed to alternate the positions of the pads on neighboring devices so that the extended lead from a pad on one device falls between two adjacent pads on the neighboring device. Such a design is shown 5 in FIG. 2.

The length of the extended leads 20 should be such that the leads overhand the edge of the chip by about 5 mils or more to facilitate other connections. The extended leads have the required mechanical strength when 5 mil in length and when used on a 2X2 mil conductive pad. When the metallization mask has been removed and the wafer is backside scribed the chip is ready for connection by means of the extended beams to another adjacent device or circuit, the beams serving the same function as a conventional connecting wire.

It is apparent from the foregoing that the heretofore described process and device has many advantages. One such advantage with respect to extended leads is that all leads may be bonded thus eliminating the need for bonding individual wires to each conductive pad. No new processing technology is involved in processing the leads other than the standard techniques of metal evaporation plating or etc.

Another significant advantage of the present invention is that devices may now be placed directly under the pads. I-Ieretofore, the danger of excess strain on the device during bonding prohibited this. Where leads extend off the pads, bonding pressures do not affect the components underlying the conductive pads, thus, more useable area is to be had for the same chip size. I-Iigher densities of pads are also possible. If for example, a 2X2 mil pad on 5 mil centers is selected, then a 75X75 mil chip can accommodate 60 pads with extended leads. Extended leads also are very economical and lend themselves to mass production.

Although this invention has been disclosed and illustrated with reference to particular applications, the principles involved are susceptible of numerous other applications which will be apparent to persons skilled in the art. The invention is, therefore, to be limited only as indicated by the scope of the appended claims.

What is claimed is:

1. An extended beam device comprising a semiconductor chip having a protective insulating layer over most of its upper surface and at least one component therein defining an element of an electrical circuit;

a conductive pad associated with said chip, said conductive pad making contact with said component in said semiconductor chip through openings in said insulating layer; and,

a conductive beam comprising an extending finger of a first material, said finger being superimposed upon said conductive pad and adhering thereto, and nonadhen'ng to the surface of said insulating layer on said chip, said finger extending from said conductive pad and onto the surface of said insulating layer on said semiconductor chip and extending longitudinally beyond the edge of said chip, and a layer of a second material imposed upon said finger of said first material and coincident therewith, said layer adhering to said finger of said first material and forming a laminate therewith.

2. The extended beam device as recited in claim 1 wherein said first material is silver and said second material is aluminum.

3. A plurality of adjacent extended beam devices adapted to be separated from each other, as recited in claim 1, aligned so that the fingers of one device are interdigitated with the fingers of the adjacent device, a finger extending from a conductive pad on one device falling between two adjacent fingers on the neighboring device whereby, when said devices are separated, the fingers are no longer adjacent.

4. A device as recited in claim 3 wherein said plurality of devices contains a finite number of scribe lines on the backside surface the scribe lines running approximately perpendicular to the extended fingers, so that when the substrate is separated into chips along the scribe lines, the fingers extend beyond the edge of each chip. 

1. An extended beam device comprising a semiconductor chip having a protective insulating layer over most of its upper surface and at least one component therein defining an element of an electrical circuit; a conductive pad associated with said chip, said conductive pad making contact with said component in said semiconductor chip through openings in said insulating layer; and, a conductive beam comprising an extending fiNger of a first material, said finger being superimposed upon said conductive pad and adhering thereto, and nonadhering to the surface of said insulating layer on said chip, said finger extending from said conductive pad and onto the surface of said insulating layer on said semiconductor chip and extending longitudinally beyond the edge of said chip, and a layer of a second material imposed upon said finger of said first material and coincident therewith, said layer adhering to said finger of said first material and forming a laminate therewith.
 2. The extended beam device as recited in claim 1 wherein said first material is silver and said second material is aluminum.
 3. A plurality of adjacent extended beam devices adapted to be separated from each other, as recited in claim 1, aligned so that the fingers of one device are interdigitated with the fingers of the adjacent device, a finger extending from a conductive pad on one device falling between two adjacent fingers on the neighboring device whereby, when said devices are separated, the fingers are no longer adjacent.
 4. A device as recited in claim 3 wherein said plurality of devices contains a finite number of scribe lines on the backside surface the scribe lines running approximately perpendicular to the extended fingers, so that when the substrate is separated into chips along the scribe lines, the fingers extend beyond the edge of each chip. 